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| SMD Type Power Darlington Transistor FMMT634 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 Highest current capability SOT23 darlington Very high hFE 0.55 625mW power dissipation +0.1 1.3-0.1 Features 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC ICM Ptot Tj,Tstg Rating 120 100 12 900 5 625 -55 to +150 Unit V V V mA A mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type FMMT634 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cutoff current Collector Emitter Cut-Off Current Emitter cut-off current Symbol V(BR)CBO IC=100iA V(BR)CEO IC=10mA V(BR)EBO IE=100iA ICBO ICES IEBO VCB=80V VCE=80V VEB=7V Testconditons Transistors Min 120 100 12 Typ 170 115 16 Max Unit V V V 10 100 10 0.67 0.72 0.75 0.82 0.68 0.85 1.5 1.33 50K 20K 15K 5K 60K 14K 600 24K 0.75 0.80 0.85 0.93 0.96 1.65 1.5 nA nA nA Collector-emitter saturation voltage * IC=100mA, IB=1mA IC=250mA, IB=1mA VCE(sat) IC=500mA, IB=5mA IC=900mA, IB=5mA IC=900mA, IB=5mA IC=1A, IB=5mA VBE(sat) IC=1A,IB=5mA VBE(ON) IC=1A,VCE=5V IC=10mA, VCE=5V IC=100mA, VCE=5V V Base-emitter saturation voltage * Base-emitter voltage * V V Static Forward Current Transfer Ratio* hFE IC=1A, VCE=5V IC=2A, VCE=5V IC=5A, VCE=5V IC=1A, VCE=2V Current-gain-bandwidth product Output capacitance Switching times * Pulse test: tp = 300 is; d 0.02. fT Cobo ton toff IC=50mA,VCE=10V,f=100MHz VCB=10V,f=1MHz IC=500mA, VCC=20V IB= 1mA 140 9 290 2.4 20 MHz pF ns is Marking Marking 634 2 www.kexin.com.cn |
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